David Bullett Nanofabrication Facility

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Find out more

For general enquiries, please email nanofab@bath.ac.uk

Etching

Dry etching is performed in our Oxford Plasma Lab 80 plus and Plasma Pro System 100 inductively coupled plasma (ICP) etchers.

Currently these are configured to use the following gases: O2, Ar, CHF3, SiCl4, Cl2, BCl3, SF6, H2 & CH4 and recipes are well established to etch GaN, GaAs, Si, SiO2, Si3N4 and many thin metallic films.

In addition we have broad experience with a wide variety of wet chemical etchants which may be required. For example, HF-based solutions are routinely used to etch novel photonic glass fibres.

Equipment Capabilities
Oxford Plasma LAB 80 Plus for RIE and ICP etching
  • Plasma dry etching with the following gases: CHF3, SF6, Ar, O2, SiCl4, Cl2, H2, CH4
Oxford Plasma Pro System 100 Cobra ICP
  • Plasma dry etching with the following gases: CHF3, SF6, Ar, O2, SiCl4, Cl2, BCl3
  • Load-locked sample exchange for fast processing
  • Wafers up to 150 mm in diameter
  • Wafer temperatures from 0-400 °C.