David Bullett Nanofabrication Facility

nanotech-banner-2

nanolithography

Find out more

For general enquiries, please email nanofab@bath.ac.uk

Nanolithography

We have several nanolithography systems capable of nanolithography, each with specific advantages.

Our electron-beam lithography system is built around a Hitachi S-4300 scanning electron microscope with a thermal field emission electron gun, and incorporates a high speed electrostatic beam blanker. The thermal field emission source is vital for achieving high (up to 25nA) and very stable beam currents. The microscope operates with acceleration voltages in the range 0.5-30kV and has a spatial resolution of 1.5nm at 30kV (at a working distance of 5mm). It is fitted with a 50mm x 50mm laser interferometer stage capable of writing over 50mm wafer areas with alignment accuracy <80nm. Direct writing is enabled with the Raith ElphyPlus lithography system. Writing to scan coils is achieved with 16 bit DSP hardware which integrates control of the beam blanker and stage (for step and repeat processes).

Our nanoimprint lithography system is an EVG 620 Semi-automated Nano-Imprint Lithography System with SmartNIL(TM) tooling for UV-nanoimprint processes. It is capable of imprinting areas from 10x10 mm up to 150 mm diameter.

Our displacement Talbot lithography system is the PhableR 100M system from EULITHA AG. It is capable of the non-contact, submicron patterning of periodic patterns on areas up to 100 mm diameter. The thoeoretical resolution limit is a periodic pitch of approximately 200 nm.

Equipment Capabilities
Field Emission Hitachi SEM with Raith ElphyPlus pattern generator and laser interferometer stage 20 nm linewidth, <80 nm stitching accuracy. 2.5" write area and multiple layer and dose assignments.
EVG 620 NIL system with SmartNIL(TM) UV-NIL, guaranteed resolution down to 50 nm, replication via soft stamps, easy replication from rigid masters, e.g. Si wafers, mask plates etc.
PhableR 100M Guaranteed pitch of 300 nm, theoretical pitch of 190 nm. Maximum pitch approx. 4 microns. High aspect ratio resist features. Maximum 100 mm diameter exposure. Alignment capability.