Department of Physics

kei_takashina

Academic Fellow

Office: 3W5.2
Email: k.takashina@bath.ac.uk

Tel: +44 (0) 1225 385395 

 
 

Research group

Silicon Quantum Transport

 

Dr Kei Takashina 

Profile

My main interests lie in the physics and applications of low-dimensional systems such as the two-dimensional electron gas in semiconductor structures. I am also interested in the underlying nuts-and-bolts such as band-structure, impurities and interfaces and furthermore, the application of technology to making new experimental systems. At present, I am particularly interested in Silicon / Silicon dioxide nanostructures for generating new coupled low-dimensional systems.

Publications

Renard, V. T., Piot, B. A., Waintal, X., Fleury, G., Cooper, D., Niida, Y., Tregurtha, D., Fujiwara, A., Hirayama, Y. and Takashina, K., 2015. Valley polarization assisted spin polarization in two dimensions. Nature Communications

Cheng, C., Guy, M., Narduzzo, A. and Takashina, K., 2015. The Leidenfrost maze. European Journal of Physics, 36 (3), 03500411.

Cole, A., Jury, B. and Takashina, K., 2014. A Leidenfrost Thermostat. Journal of Heat Transfer, 137 (3), 034502.

Takashina, K., Niida, Y., Renard, V. T., Piot, B. A., Tregurtha, D., Fujiwara, A. and Hirayama, Y., 2013. Spin and valley polarization dependence of resistivity in two dimensions. Physical Review B, 88 (20), 201301(R).

Renard, V. T., Duchemin, I., Niida, Y., Fujiwara, A., Hirayama, Y. and Takashina, K., 2013. Metallic behaviour in SOI quantum wells with strong intervalley scattering. Scientific Reports, 3, 2011.

Niida, Y., Takashina, K., Ono, Y., Fujiwara, A. and Hirayama, Y., 2013. Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting. Applied Physics Letters, 102 (19), 191603.

Grounds, A., Still, R. and Takashina, K., 2012. Enhanced droplet control by transition boiling. Scientific Reports, 2, 720.

Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y., 2011. Impact of valley polarization on the resistivity in two dimensions. Physical Review Letters, 106 (19), 196403.

Takashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K., 2010. Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. Semiconductor Science and Technology, 25 (12), 125001.

Takashina, K., Nishiguchi, K., Ono, Y., Fujiwara, A., Fujisawa, T., Hirayama, Y. and Muraki, K., 2009. Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures. Applied Physics Letters, 94 (14), 142104.

Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Negative magnetoresistance of a silicon 2deg under in-plane magnetic field due to spin-splitting of upper subbands. International Journal of Modern Physics B, 23 (12 & 13), pp. 2938-2942.

Niida, Y., Takashina, K., Fujiwara, A., Fujisawa, T. and Hirayama, Y., 2009. Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field. Applied Physics Letters, 94 (14), 142101.

Liu, H. W., Fujisawa, T., Ono, Y., Inokawa, H., Fujiwara, A., Takashina, K. and Hirayama, Y., 2008. Pauli-spin-blockade transport through a silicon double quantum dot. Physical Review B, 77 (7), 073310.

Ono, Y., Khalafalla, M., Nishiguchin, K., Takashina, K., Fujiwara, A., Horiguchi, S., Inokawa, H. and Takahashi, Y., 2008. Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics. Applied Surface Science, 254 (19), pp. 6252-6256.

This list was generated on Thu Dec 8 11:24:10 2016 GMT.

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