Mask-based optical lithography is centred around a Karl Süss MJB3 UV contact mask aligner configured for top side alignment and capable of registration and printing of designs with resolution down to 1 μm. Thin and thick resist materials can be exposed on substrates up to 75 mm in diameter, using masks up to 100 mm x 100 mm in size.
Alternatively, maskless lithography can be performed with a Heidelberg Instruments μPG 101 Direct Laser Writer Lithography System capable of sub-micron patterning. The system includes a 375 nm laser source for exposure of standard and UV resists such as SU-8. Samples to be patterned can be up to 125 x 125 mm². Vector and raster exposure modes are available, and there is also a 3D exposure mode.