We have several nanolithography systems capable of nanolithography, each with specific advantages.
Our electron-beam lithography system is built around a Hitachi S-4300 scanning electron microscope with a thermal field emission electron gun, and incorporates a high-speed electrostatic beam blanker.
The thermal field emission source is vital for achieving high (up to 25 nA) and very stable beam currents. The microscope operates with acceleration voltages in the range 0.5-30 kV and has a spatial resolution of 1.5 nm at 30 kV (at a working distance of 5 mm).
It is fitted with a 50 mm x 50 mm laser interferometer stage capable of writing over 50 mm wafer areas with alignment accuracy <80 nm. It is capable of a 20 nm linewidth and multiple layer and dose assignments.
Direct writing is enabled with the Raith ElphyPlus lithography system. Writing to scan coils is achieved with 16 bit DSP hardware which integrates control of the beam blanker and stage (for step and repeat processes).
Our nanoimprint lithography system is an EVG 620 Semi-automated Nano-Imprint Lithography System with SmartNIL(TM) tooling for UV-nanoimprint processes. It is capable of imprinting areas from 10x10 mm up to 150 mm diameter with a guaranteed resolution down to 50 nm. Replication is via intermediate soft stamps so is suitable for easy replication from rigid masters, e.g. Si wafers, mask plates etc.
Our displacement Talbot lithography system is the PhableR 100M system from EULITHA AG. It is capable of the non-contact, submicron patterning of periodic patterns on areas up to 100 mm diameter.
The theoretical resolution limit is a periodic pitch of approximately 200 nm, but the guaranteed pitch is 300 nm. The maximum pitch is approx. 4 microns.
High-aspect ratio resist features are achievable and the machine also has an alignment capability.