Department of Electronic and Electrical Engineering
Professor Wang Wang

Contact details

Room 2 East 2.30

Tel: +44 (0) 1225 383776

Email: w.n.wang@bath.ac.uk

Prof Wang Nang Wang

BSc, MA, PhD

Profile

Professor Wang obtained his BA from CCIST Taiwan and PhD from Cambridge University. He was Scientific Advisor for EOS and MRL of ITRI Taiwan and a professor at NCTU Taiwan.

He was the founder, chairman and CEO of Quantum Optech Ltd, the co-founder and director of Arima Optoelectronics Co, and the founder of NanoGaN.

He was Chair Professor in Department of Physics at the University of Bath from 199 to 2007, and joined the Department of Electronic and Electrical Engineering in 2007. 

Research

A central focus of Prof Wang's research is the high power and high efficiency LEDs for solid state lighting, backlighting, and medical applications. Bath’s team started the current GaN work in 1999. The early work of GaN by Dr W C Clark in Bath dated back to 1976 (Cathodoluminescence from GaN implemented with Arsenic or Phosphorus).

Prof Wang's team demonstrated the UK’s first electrically pumped 405 nm blue-violet laser diodes in June 2003. The team's innovative approach of using nano-structured compliant layers enabled them to grow very high quality and low strain GaN on Si and Sapphire. The team has also developed nano-imprint and fabrication technology for creating purposely designed nano-patterns.

Prof Wang's team has generated a significant IPR portfolio relating to GaN based light emitting diodes and laser diodes (33 patents filed, 26 granted in UK, USA, Japan, Taiwan, and China). In contrast to most academics, their close links with industries made them acutely aware of the advantage of close collaboration and outsourcing with industrial partners, which in turn reduces the requirement for various expensive pieces of capital equipment and minimises the time scale for commercialisation. 

Publications

Book Sections

Liu, C., Wang, W. N., Shields, P. A., Denchitcharoen, S., Causa, F. and Allsopp, D. E. W., 2008. Improvement of efficiency droop in resonanace tunneling LEDS. In: Ferguson, I. T., Taguchi, T., Ashdown, I. E. and Park, S. J., eds. 8th International Conference On Solid State Lighting. Vol. 7058. Spie-Int Soc Optical Engineering, D580-D580. (Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE))

Charlton, M. D. B., Lee, T., Zoorob, M. E., Shields, P. A. and Wang, W. N., 2007. Improving led extraction efficiency through surface patterning - art. no. 666914. In: Ferguson, I. T., Narendran, N., Taguchi, T. and Ashdown, I. E., eds. Seventh International Conference on Solid State Lighting. Vol. 6669. , p. 66914. (Proceedings of the Society of Photo-Optical Instrumentation Engineers (Spie))

Liu, C., Stepanov, S., Gott, A., Shields, P. A., Zhirnov, E., Wang, W. N., Steimetz, E. and Zettler, J. T., 2006. High temperature refractive indices of GaN. In: Hildebrandt, S. and Stutzmann, M., eds. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6. Vol. 3. , pp. 1884-1887. (Physica Status Solidi C-Current Topics in Solid State Physics)

Articles

Jiang, Q., Allsopp, D. W. E., Bowen, C. R. and Wang, W. N., 2013. The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates. Semiconductor Science and Technology, 28 (9), 094010.

Jiang, Q., Lewins, C. J., Allsopp, D. W. E., Bowen, C. R. and Wang, W. N., 2013. Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction. Japanese Journal of Applied Physics, 52 (8 PART2), 08JB24.

Jiang, Q., Lewins, C.J., Allsopp, D.W.E., Bowen, C.R., Wang, W.N., Satka, A., Priesol, J. and Uherek, F., 2013. Enhanced photoluminescence from InGaN/GaN quantum wells on a GaN/Si(111) template with extended three-dimensional GaN growth on low-temperature AIN interlayer. Japanese Journal of Applied Physics, 52 (6), 061002.

Lewins, C.J., Allsopp, D.W.E., Shields, P.A., Gao, X., Humphreys, B. and Wang, W.N., 2013. Light extracting properties of buried photonic quasi-crystal slabs in InGaN/GaN LEDs. IEEE/OSA Journal of Display Technology, 9 (5), pp. 333-338.

Lethy, K.J., Edwards, P.R., Liu, C., Wang, W. N. and Martin, R.W., 2012. Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array. Journal of Applied Physics, 112 (2), 023507.

Shields, P. A., Charlton, M. D. B., Lewins, C. J., Gao, X., Allsopp, D. W. E., Wang, W. N. and Humphreys, B., 2012. Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures. Physica Status Solidi (A), 209 (3), pp. 451-455.

Shields, P., Hugues, M., Zúñiga-Pérez, J., Cooke, M., Dineen, M., Wang, W., Causa, F. and Allsopp, D., 2012. Fabrication and properties of etched GaN nanorods. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 631-634.

Jiang, Q., Edwards, M. J., Shields, P. A., Allsopp, D. W. E., Bowen, C. R., Wang, W. N., Tóth, L., Pécz, B., Srnanek, R., Satka, A. and Kovac, J., 2012. Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE. Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (3-4), pp. 650-653.

Shields, P., Liu, C., Atka, A., Trampert, A., Zuniga-Perez, J., Alloing, B., Hako, D., Uherek, F., Wang, W., Causa, F. and Allsopp, D., 2011. Nanopendeo coalescence overgrowth of GaN on etched nanorod array. Physica Status Solidi (C) Current Topics in Solid State Physics, 8 (7-8), pp. 2334-2336.

Wang, W. N., Shields, P. A., Liu, C., Allsopp, D. W. E. and Causa, F., 2011. Advances in nano-enabled GaN photonic devices. Proceedings of SPIE - The International Society for Optical Engineering, 7945, 794523.

Charlton, M. D. B., Shields, P. A., Allsopp, D. W. E. and Wang, W., 2010. High-efficiency photonic quasi-crystal light emitting diodes incorporating buried photonic crystal structures. Proceedings of SPIE - The International Society for Optical Engineering, 7784, 778407.

Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Campion, R. P., Foxon, C. T., Liu, C., Shields, P. and Wang, W., 2010. GaN devices based on nanorods. Journal of Physics: Conference Series, 209 (1), 012001.

Liu, C., Shields, P., Chen, Q., Allsopp, D., Wang, W. N., Bowen, C., Phan, T. l. and Cherns, D., 2010. Variations in mechanisms of selective area growth of GaN on nano-patterned substrates by MOVPE. Physica Status Solidi (C) Current Topics in Solid State Physics, 7 (1), pp. 32-35.

Liu, C., Satka, A., Jagadamma, L. K., Edwards, P. R., Allsopp, D., Martin, R. W., Shields, P., Kovac, J., Uherek, F. and Wang, W. N., 2009. Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. Applied Physics Express, 2 (12), 121002.

Shields, P. A., Liu, C., Nasir, M., Allsopp, D. W. E. and Wang, W. N., 2009. Enhanced light extraction in nitride light-emitting diodes by epitaxially grown photonic-crystal nanopyramid arrays. Applied Physics Letters, 95 (12), 123120.

Shields, P. A., Charlton, M. D. B., Lee, T., Zoorob, M. E., Allsopp, D. W. E. and Wang, W. N., 2009. Enhanced light extraction by photonic quasi-crystals in GaN blue LEDs. IEEE Journal of Selected Topics in Quantum Electronics, 15 (4), pp. 1269-1274.

Chen, Q., Hubbard, G., Shields, P. A., Liu, C., Allsopp, D. W. E., Wang, W. N. and Abbott, S., 2009. Broadband moth-eye antireflection coatings fabricated by low-cost nanoimprinting. Applied Physics Letters, 94 (26), 263118.

Hubbard, G., Abbott, S. J., Chen, Q., Allsopp, D. W. E., Wang, W. N., Bowen, C. R., Stevens, R., Satka, A., Hasko, D., Uherek, F. and Kovac, J., 2009. Wafer-scale transfer of nanoimprinted patterns into silicon substrates. Physica E-Low-Dimensional Systems & Nanostructures, 41 (6), pp. 1118-1121.

Sytniewski, L. J., Lapkin, A. A., Stepanov, S. and Wang, W. N., 2008. CFD optimisation of up-flow vertical HVPE reactor for GaN growth. Journal of Crystal Growth, 310 (14), pp. 3358-3365.

Meshi, L., Cherns, D., Griffiths, I., Khongphetsak, S., Gott, A., Liu, C., Denchitcharoen, S., Shields, P., Wang, W. N., Campion, R., Novikov, S. and Foxon, T., 2008. The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer. Physica Status Solidi (C) Current Topics in Solid State Physics, 5 (6), pp. 1645-1647.

Wang, W. N., Liu, C., Gott, A., Denchitcharoen, S., Shields, P., Meshi, L., Khongphetsak, S., Griffiths, I., Cherns, D. and Campion, R., 2008. Nano-pendeo GaN growth of light emitting devices on silicon. Journal of Light and Visual Environment, 32 (2), pp. 187-190.

Liu, C., Shields, P. A., Denchitcharoen, S., Stepanov, S., Gott, A. and Wang, W. N., 2007. Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 300 (1), pp. 104-109.

May, P. W., Tsai, H. Y., Wang, W. N. and Smith, J. A., 2006. Deposition of CVD diamond onto GaN. Diamond and Related Materials, 15 (4-8), pp. 526-530.

Liu, C., Stepanov, S., Shields, P. A., Gott, A., Wang, W. N., Steimetz, E. and Zettler, J. T., 2006. In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry. Applied Physics Letters, 88 (10).

Zhirnov, E., Stepanov, S., Gott, A., Wang, W. N., Shreter, Y. G., Tarkhin, D. V. and Bochkareva, N. I., 2005. ICP etching of III-nitride based laser structure with Cl-2-Ar plasma assisted by Si coverplate material. Journal of Vacuum Science & Technology A, 23 Jul-Aug (4), pp. 687-692.

Yakovlev, E. V., Talalaev, R. A., Makarov, Y. N., Yavich, B. S. and Wang, W. N., 2004. Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor. Journal of Crystal Growth, 261 (2-3), pp. 182-189.

Zhirnov, E., Stepanov, S., Wang, W. N., Shreter, Y. G., Takhin, D. V. and Bochkareva, N. I., 2004. Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl-2/Ar plasma. Journal of Vacuum Science & Technology A, 22 Nov-Dec (6), pp. 2336-2341.

Rajasingam, S., Sarua, A., Kuball, M., Cherodian, A., Miles, M. J., Younes, C. M., Yavich, B., Wang, W. N. and Grandjean, N., 2003. High-temperature annealing of AlGaN: Stress, structural, and compositional changes. Journal of Applied Physics, 94 (10), pp. 6366-6371.

Tseng, C. L., Youh, M. J., Moore, G. P., Hopkins, M. A., Stevens, R. and Wang, W. N., 2003. Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices. Applied Physics Letters, 83 (18), pp. 3677-3679.

Sarua, A., Rajasingam, S., Kuball, M., Younes, C., Yavich, B. and Wang, W. N., 2002. High temperature annealing of AlGaN : Stress and composition changes. Physica Status Solidi (C)

Pi, X. D., Coleman, P. G., Tseng, C. L., Burrows, C. P., Yavich, B. and Wang, W. N., 2002. Defects in GaN films studied by positron annihilation spectroscopy. Journal of Physics-Condensed Matter, 14 (12), L243-L248.

Stepanov, S., Wang, W. N., Yavich, B. S., Bougrov, V., Rebane, Y. T. and Shreter, Y. G., 2001. Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers. MRS Internet Journal of Nitride Semiconductor Research, 6 (6), pp. 1-8.

Oriato, D., Walker, A. B. and Wang, W. N., 2001. Simulation of widebandgap multi-quantum well light emitting diodes. Vlsi Design, 13 (1-4), pp. 295-299.

Conference or Workshop Items

Shields, P.A., Lis, S., Lee, T., Allsopp, D.W.E., Charlton, M.D.B., Zoorob, M.E. and Wang, W.N., 2009. Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. In: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, 2009-06-02 - 2009-06-03, Baltimore, M.D..

Bowen, C., Allsopp, D., Stevens, R., Shields, P. and Wang, W., 2006. Modelling and designing GaN piezeoelectric MEMS,. In: Second International Conference on Multi-Material Micro Manufacture, 2006-01-01, Grenoble.

Patent

Wang, W.-N., 2008. Production of single-crystal semiconductor material using a nanostructure template. C30B29/38-TW200839041 (A), 01 October 2008.

Wang, W.-N., 2008. GaN epitaxial layer over growth method. H01L21/20-GB2446471 (A), 13 August 2008.

Wang, W.-N., 2008. Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials. C30B25/18-TW200801257 (A), 01 January 2008.

This list was generated on Wed Aug 20 04:08:50 2014 IST.