Mask-based optical lithography

This is centred around a Karl Süss MJB3 UV contact mask aligner configured for top-side alignment. It's capable of registration and printing of designs with resolution down to 1 micrometre (μm). Thin and thick resist materials can be exposed on substrates up to 75 millimetres (mm) in diameter, using masks up to 100mm by 100mm in size.

Maskless lithography

This can be performed with a Heidelberg Instruments μPG 101 Direct Laser Writer Lithography System capable of sub-micron patterning. The system includes a 375 nanometers (nm) laser source for exposure of standard and UV resists such as SU-8. Samples to be patterned can be up to 125 by 125mm². Vector and raster exposure modes are available, and there is also a 3D exposure mode.