Description:
| Aims: The aims of this unit are to explore some of the physics underlying the behaviour of electrons in semiconductor materials and the operation of simple semiconductor devices.
Learning Outcomes: After taking this unit the student should be able to:
* discuss the basic concepts of semiconductor physics;
* calculate carrier concentrations and effective masses;
* outline the basic principles of semiconductor device operation;
* describe the interactions between electrons and photons such as absorption, spontaneous emission and stimulated emission;
* give examples of common optoelectronic devices for emitting, detecting and modulating light, and explain their physical principles of operation.
Skills: Numeracy T/F A, Problem Solving T/F A.
Content: Basic properties of semiconductors (4 hours): Electrons and holes and their effective masses. Extrinsic and intrinsic semiconductors; donors and acceptors. Electron and hole concentrations, semiconductor statistics.
Transport properties (2 hours): Electrical conduction and scattering of electrons and holes in solids. Drift velocity, resistivity, diffusion, electron-hole recombination, recombination length. The Hall effect.
The p-n junction (2 hours): The unbiased p-n junction; junction formation, depletion layer width. Biased p-n junctions; band profiles, depletion region width, junction capacitance. Balance of drift and diffusion currents. Qualitatitive introduction to the ideal diode equation, reverse bias breakdown.
Electron-photon interaction in semiconductors (3 hours): Optical absorption in bulk semiconductors; spectral dependence, photocurrent, P-I-N photodiodes. Optical emission in semiconductors; radiative and non-radiative transitions, light-emitting diodes.
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